| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA962A |
Silicon PNP epitaxial power transistor, complementary 2SC2194A |
TOSHIBA |
| 2 |
2SA963 |
Power Device - Power Transistors - Others |
Panasonic |
| 3 |
2SA963 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 4 |
2SA965 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6 |
2SA968 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-126A-A1 |
New Jersey Semiconductor |
| 7 |
2SA968 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 8 |
2SA968 |
Silicon PNP epitaxial power transistor, complementary 2SC2238 |
TOSHIBA |
| 9 |
2SA968 |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 10 |
2SA968A |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 11 |
2SA968A |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 12 |
2SA968B |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 13 |
2SA968B |
V(cbo): 200V; V(ceo): 200V; V(ebo): 5V; 1.5A; 25W ; silicon PNP epitaxial type silicon power transistor |
TOSHIBA |
| 14 |
2SA968B |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 15 |
2SA969 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-126A-A1 |
New Jersey Semiconductor |
| 16 |
2SA969 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
| 17 |
2SA969A |
Silicon PNP epitaxial power transistor, complementary 2SC2238A |
TOSHIBA |
| 18 |
2SC2194A |
Silicon NPN epitaxial power transistor, suitable for TV Sound Output, vert. deflection output, complementary to 2SA962A |
TOSHIBA |
| 19 |
CSA965 |
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 240 hFE |
Continental Device India Limited |
| 20 |
CSA965O |
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 80 - 160 hFE |
Continental Device India Limited |
| 21 |
CSA965Y |
0.900W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.800A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 22 |
CSA966 |
0.900W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 100 - 320 hFE |
Continental Device India Limited |
| 23 |
CSA966O |
0.900W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 24 |
CSA966Y |
0.900W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 160 - 320 hFE |
Continental Device India Limited |
| 25 |
CSA968 |
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 |
Continental Device India Limited |
| 26 |
CSA968A |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238A |
Continental Device India Limited |
| 27 |
CSA968AO |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO |
Continental Device India Limited |
| 28 |
CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY |
Continental Device India Limited |
| 29 |
CSA968B |
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B |
Continental Device India Limited |
| 30 |
CSA968BO |
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO |
Continental Device India Limited |
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