| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 2 |
2SB1061 |
PNP Silicon Darlington Power Transistor |
NEC |
| 3 |
2SB1062 |
Si PNP Epitaxial Plannar |
Unknow |
| 4 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 5 |
2SB1063 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 6 |
2SB1064 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 7 |
2SB1064 |
Epitaxial Planar PNP Silicon Transistor |
ROHM |
| 8 |
2SB1064 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 9 |
2SB1065 |
Epitaxial Planar PNP Silicon Transistor |
ROHM |
| 10 |
2SB1065 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 11 |
2SB1066M |
Epitaxial Planar PNP Silicon Transistors |
ROHM |
| 12 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 13 |
2SB1068 |
PNP SILICON TRANSISTOR |
NEC |
| 14 |
2SB1069 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 15 |
2SB1069A |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 16 |
CSB1065 |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 |
Continental Device India Limited |
| 17 |
CSB1065N |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N |
Continental Device India Limited |
| 18 |
CSB1065P |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P |
Continental Device India Limited |
| 19 |
CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q |
Continental Device India Limited |
| 20 |
CSB1065R |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R |
Continental Device India Limited |
| 21 |
CSD1506 |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSB1065 |
Continental Device India Limited |
| 22 |
CSD1506N |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSB1065N |
Continental Device India Limited |
| 23 |
CSD1506P |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSB1065P |
Continental Device India Limited |
| 24 |
CSD1506Q |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSB1065Q |
Continental Device India Limited |
| 25 |
CSD1506R |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSB1065R |
Continental Device India Limited |
| 26 |
KL5KUSB106 |
USB to parallel |
Kawasaki LSI |
| 27 |
SB106 |
Bridge: Standard |
Taiwan Semiconductor |
| 28 |
SB1060 |
60 V, Schottky die |
MEMT Micro-Electro-Magnetical Tech Co. |
| 29 |
SB1060 |
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere) |
Panjit International Inc |
| 30 |
SB1060 |
60 V, 10 A, schottky barrier rectifier |
TRANSYS Electronics Limited |
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