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Datasheets for SB54

Datasheets found :: 59
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 2SB54 Audio Frequency Transistor TOSHIBA
2 2SB54 Low Frequency Small-Signal Transistor TOSHIBA
3 2SB54 Germanium PNP alloy junction audio transistor TOSHIBA
4 2SB541 Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor NEC
5 2SB541 Silicon PNP Power Transistors TO-3 package Savantic
6 2SB544 Low-Frequency Power Amp / Electronic Governor Applications SANYO
7 2SB546 Silicon PNP Power Transistors TO-220C package Savantic
8 2SB546A POWER TRANSISTORS MOSPEC Semiconductor
9 2SB546A Silicon transistor NEC
10 2SB546A Silicon PNP Power Transistors TO-220C package Savantic
11 2SB546A-S Silicon transistor NEC
12 2SB546A-Z Silicon transistor NEC
13 2SB547A VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR NEC
14 2SB547A Color TV Vertical Deflection Output Unknow
15 2SB548 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS NEC
16 2SB548 Silicon PNP Power Transistors TO-126 package Savantic
17 2SB548 Audio Frequency Power Amplifier Unknow
18 2SB549 (2SB548) PNP/NPN Silicon Epitaxial Transistor NEC
19 2SB549 (2SB548) PNP/NPN Silicon Epitaxial Transistor NEC
20 CSB546 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401 Continental Device India Limited
21 CSB546O 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O Continental Device India Limited
22 CSB546R 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R Continental Device India Limited
23 CSB546Y 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y Continental Device India Limited
24 CSD401 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 400 hFE. Complementary CSB546 Continental Device India Limited
25 CSD401G 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 200 - 400 hFE. Complementary CSB546G Continental Device India Limited
26 CSD401O 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSB546O Continental Device India Limited
27 CSD401R 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSB546R Continental Device India Limited
28 CSD401Y 25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSB546Y Continental Device India Limited
29 KSB546 PNP Epitaxial Silicon Transistor Fairchild Semiconductor
30 KSB546 PNP (TV VERTICAL DEFLECTION OUTPUT) Samsung Electronic


Datasheets found :: 59
Page: | 1 | 2 |



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