No. |
Part Name |
Description |
Manufacturer |
1 |
2SB54 |
Audio Frequency Transistor |
TOSHIBA |
2 |
2SB54 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
3 |
2SB54 |
Germanium PNP alloy junction audio transistor |
TOSHIBA |
4 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
5 |
2SB541 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
6 |
2SB544 |
Low-Frequency Power Amp / Electronic Governor Applications |
SANYO |
7 |
2SB546 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
8 |
2SB546A |
POWER TRANSISTORS |
MOSPEC Semiconductor |
9 |
2SB546A |
Silicon transistor |
NEC |
10 |
2SB546A |
Silicon PNP Power Transistors TO-220C package |
Savantic |
11 |
2SB546A-S |
Silicon transistor |
NEC |
12 |
2SB546A-Z |
Silicon transistor |
NEC |
13 |
2SB547A |
VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
NEC |
14 |
2SB547A |
Color TV Vertical Deflection Output |
Unknow |
15 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
16 |
2SB548 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
17 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
18 |
2SB549 |
(2SB548) PNP/NPN Silicon Epitaxial Transistor |
NEC |
19 |
2SB549 |
(2SB548) PNP/NPN Silicon Epitaxial Transistor |
NEC |
20 |
CSB546 |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401 |
Continental Device India Limited |
21 |
CSB546O |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O |
Continental Device India Limited |
22 |
CSB546R |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R |
Continental Device India Limited |
23 |
CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y |
Continental Device India Limited |
24 |
CSD401 |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 400 hFE. Complementary CSB546 |
Continental Device India Limited |
25 |
CSD401G |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 200 - 400 hFE. Complementary CSB546G |
Continental Device India Limited |
26 |
CSD401O |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSB546O |
Continental Device India Limited |
27 |
CSD401R |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSB546R |
Continental Device India Limited |
28 |
CSD401Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSB546Y |
Continental Device India Limited |
29 |
KSB546 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
30 |
KSB546 |
PNP (TV VERTICAL DEFLECTION OUTPUT) |
Samsung Electronic |
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