| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB54 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 2 |
2SB54 |
Germanium PNP alloy junction audio transistor |
TOSHIBA |
| 3 |
2SB541 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 4 |
2SB544 |
Low-Frequency Power Amp / Electronic Governor Applications |
SANYO |
| 5 |
2SB546 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 6 |
2SB546A |
POWER TRANSISTORS |
MOSPEC Semiconductor |
| 7 |
2SB546A |
Silicon transistor |
NEC |
| 8 |
2SB546A |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 9 |
2SB546A-S |
Silicon transistor |
NEC |
| 10 |
2SB546A-Z |
Silicon transistor |
NEC |
| 11 |
2SB547A |
VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
NEC |
| 12 |
2SB547A |
Color TV Vertical Deflection Output |
Unknow |
| 13 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 14 |
2SB548 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 15 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 16 |
2SB549 |
(2SB548) PNP/NPN Silicon Epitaxial Transistor |
NEC |
| 17 |
2SB549 |
(2SB548) PNP/NPN Silicon Epitaxial Transistor |
NEC |
| 18 |
CSB546 |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401 |
Continental Device India Limited |
| 19 |
CSB546O |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O |
Continental Device India Limited |
| 20 |
CSB546R |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R |
Continental Device India Limited |
| 21 |
CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y |
Continental Device India Limited |
| 22 |
CSD401 |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 400 hFE. Complementary CSB546 |
Continental Device India Limited |
| 23 |
CSD401G |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 200 - 400 hFE. Complementary CSB546G |
Continental Device India Limited |
| 24 |
CSD401O |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSB546O |
Continental Device India Limited |
| 25 |
CSD401R |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSB546R |
Continental Device India Limited |
| 26 |
CSD401Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSB546Y |
Continental Device India Limited |
| 27 |
KSB546 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
KSB546 |
PNP (TV VERTICAL DEFLECTION OUTPUT) |
Samsung Electronic |
| 29 |
KSB546O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 30 |
KSB546Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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