| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1PS10SB62 |
Schottky barrier diode |
Philips |
| 2 |
1PS66SB62 |
40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 3 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 4 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 5 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 6 |
1PS76SB62 |
Schottky barrier diode |
Philips |
| 7 |
1PS79SB62 |
Schottky barrier diode |
Philips |
| 8 |
2SB62 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 9 |
2SB621 |
750mW NPN silicon transistor |
Micro Electronics |
| 10 |
2SB621 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 11 |
2SB621A |
750mW NPN silicon transistor |
Micro Electronics |
| 12 |
2SB621A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 13 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 14 |
2SB624-L |
Silicon transistor |
NEC |
| 15 |
2SB624-T1B |
Silicon transistor |
NEC |
| 16 |
2SB624-T2B |
Silicon transistor |
NEC |
| 17 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 18 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 19 |
2SB628 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 20 |
CSB621 |
0.750W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 85 - 340 hFE |
Continental Device India Limited |
| 21 |
CSB621A |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 85 - 340 hFE |
Continental Device India Limited |
| 22 |
CSB621AQ |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 23 |
CSB621AS |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 170 - 340 hFE |
Continental Device India Limited |
| 24 |
CSB621Q |
0.750W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 85 - 170 hFE |
Continental Device India Limited |
| 25 |
CSB621R |
0.750W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 26 |
CSB621S |
0.750W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 170 - 340 hFE |
Continental Device India Limited |
| 27 |
CSB624 |
0.200W General Purpose PNP SMD Transistor. 25V Vceo, 0.700A Ic, 110 - 400 hFE. Complementary CSD596 |
Continental Device India Limited |
| 28 |
MSB62D |
RECTANGULAR EPOXY PACKAGE LED LAMP |
Micro Electronics |
| 29 |
MSB62DA |
RECTANGULAR EPOXY PACKAGE LED LAMP |
Micro Electronics |
| 30 |
SB620 |
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere) |
Panjit International Inc |
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