| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1PS10SB63 |
Schottky barrier diode |
Philips |
| 2 |
1PS10SB63 |
1PS10SB63; Schottky barrier diode |
Philips |
| 3 |
1PS10SB63 |
1PS10SB63; Schottky barrier diode |
Philips |
| 4 |
1PS66SB63 |
5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 5 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 6 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 7 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 8 |
1PS79SB63 |
Schottky barrier diode |
Philips |
| 9 |
2SB63 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 10 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 11 |
2SB631 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 12 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 13 |
2SB631K |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 14 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 15 |
2SB632 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 16 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 17 |
2SB632K |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 18 |
2SB633 |
POWER TRANSISTORS(6.0A,85V,40W) |
MOSPEC Semiconductor |
| 19 |
2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications |
SANYO |
| 20 |
2SB633 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
| 21 |
2SB633 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 22 |
2SB633P |
General-Purpose Amplifier Transistors |
SANYO |
| 23 |
2SB634 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 24 |
CSB631 |
8.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 25 |
CSB631D |
8.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 26 |
CSB631E |
8.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 27 |
CSB631F |
8.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 28 |
CSB631K |
8.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.000A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 29 |
CSB631KD |
8.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 30 |
CSB631KE |
8.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
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