No. |
Part Name |
Description |
Manufacturer |
1 |
1PS89SB74 |
Schottky barrier double diode |
Philips |
2 |
2SB740 |
Silicon PNP Transistor |
Hitachi Semiconductor |
3 |
2SB740 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
4 |
2SB740 |
Transistors>Amplifiers/Bipolar |
Renesas |
5 |
2SB743 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
6 |
2SB744 |
NPN Silicon Power Transistor |
NEC |
7 |
2SB744 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
8 |
2SB744A |
NPN Silicon Power Transistor |
NEC |
9 |
2SB744A |
Silicon PNP Power Transistors TO-126 package |
Savantic |
10 |
2SB745 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
11 |
2SB745A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
12 |
2SB747 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
13 |
CSD794 |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 320 hFE. Complementary CSB744 |
Continental Device India Limited |
14 |
CSD794A |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 320 hFE. Complementary CSB744A |
Continental Device India Limited |
15 |
CSD794AO |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744AO |
Continental Device India Limited |
16 |
CSD794AR |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744AR |
Continental Device India Limited |
17 |
CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY |
Continental Device India Limited |
18 |
CSD794O |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O |
Continental Device India Limited |
19 |
CSD794R |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744R |
Continental Device India Limited |
20 |
CSD794Y |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y |
Continental Device India Limited |
21 |
FMBM5401_SB74001 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
22 |
FSB749 |
PNP Low Saturation Transistor |
Fairchild Semiconductor |
23 |
FSUSB74 |
High-Speed USB 2.0 Switch / Multiplexer |
Fairchild Semiconductor |
24 |
KSB744 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
25 |
KSB744 |
-70 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
26 |
KSB744A |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
27 |
KSB744A |
-70 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
28 |
KSB744AYSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
29 |
KSB744OSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
30 |
KSB744YSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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