No. |
Part Name |
Description |
Manufacturer |
1 |
2SB772 |
Silicon transistor |
NEC |
2 |
2SB772 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
3 |
2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
4 |
2SB772-GR |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
5 |
2SB772-O |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
6 |
2SB772-R |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
7 |
2SB772-Y |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
8 |
2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
9 |
CSB772 |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 |
Continental Device India Limited |
10 |
CSB772E |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E |
Continental Device India Limited |
11 |
CSB772P |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P |
Continental Device India Limited |
12 |
CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q |
Continental Device India Limited |
13 |
CSB772R |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R |
Continental Device India Limited |
14 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
15 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
16 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
17 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
18 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
19 |
HSB772 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
20 |
HSB772S |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
21 |
KSB772 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
22 |
KSB772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
23 |
KSB772OS |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
24 |
KSB772YS |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
25 |
KSB772YSTSSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
26 |
KSB772YSTSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
27 |
KSB772YSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
28 |
TSB772CK |
Discrete Devices-Transistor-PNP |
Taiwan Semiconductor |
29 |
UTC2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
30 |
UTC2SB772NL |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
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