| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB831 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 2 |
2SB831 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 3 |
2SB831 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 4 |
2SB833 |
Silicon PNP triple diffused darlington power, high current switching transistor |
TOSHIBA |
| 5 |
2SB834 |
POWER TRANSISTORS(3.0A,60V,30W) |
MOSPEC Semiconductor |
| 6 |
2SB834 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 7 |
2SB834 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 8 |
2SB834 |
Power transistor for low frequency applications |
TOSHIBA |
| 9 |
2SB834 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 10 |
CSB834 |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880 |
Continental Device India Limited |
| 11 |
CSB834O |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O |
Continental Device India Limited |
| 12 |
CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y |
Continental Device India Limited |
| 13 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 14 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 15 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 16 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 17 |
HSB83 |
Small Signal Diode |
Hitachi Semiconductor |
| 18 |
HSB83 |
Diodes>Switching |
Renesas |
| 19 |
HSB83YP |
Small Signal Diode |
Hitachi Semiconductor |
| 20 |
HSB83YP |
Diodes>Switching |
Renesas |
| 21 |
KSB834 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 22 |
KSB834 |
PNP (LOW FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
| 23 |
KSB834O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 24 |
KSB834W |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 25 |
KSB834WYTM |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 26 |
KSB834Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 27 |
KSB834YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
SB830 |
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) |
Panjit International Inc |
| 29 |
SB830 |
SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 8.0A |
Shanghai Sunrise Electronics |
| 30 |
SB830 |
30 V, 8 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
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