| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC2001 |
NPN SILICON TRANSISTOR |
NEC |
| 2 |
2SC2001 |
TO-92 Plastic-Encapsulate Transistors |
Unknow |
| 3 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 4 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 5 |
2SC2001-K |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SC2001-L |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SC2001-M |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
CSC2001 |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
Continental Device India Limited |
| 9 |
CSC2001K |
0.600W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE |
Continental Device India Limited |
| 10 |
CSC2001LAI |
0.600W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE |
Continental Device India Limited |
| 11 |
CSC2001MAI |
0.600W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE |
Continental Device India Limited |
| 12 |
DSC2001 |
Bipolar Transistors |
Panasonic |
| 13 |
KSC2001 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14 |
KSC2001 |
NPN GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION) |
Samsung Electronic |
| 15 |
KSC2001GBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
KSC2001GTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 17 |
KSC2001OBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 18 |
KSC2001YBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 19 |
KSC2001YTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 20 |
SSC2001S |
Continuous conduction mode (CCM), PFC IC |
Sanken |
| | | |
