Datasheets for SC233

Datasheets found :: 72 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
1	2SC2330	NPN SILICON EPITAXIAL TRANSISTOR	Unknow
2	2SC2331	Silicon Power Transistor	NEC
3	2SC2331	Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220	New Jersey Semiconductor
4	2SC2331	Silicon NPN Power Transistors TO-220 package	Savantic
5	2SC2333	PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance)	NEC
6	2SC2333	Trans GP BJT NPN 400V 2A 3-Pin(3+Tab) TO-220	New Jersey Semiconductor
7	2SC2333	Silicon NPN Power Transistors TO-220C package	Savantic
8	2SC2334	Silicon transistor	NEC
9	2SC2334	Silicon NPN Power Transistors TO-220 package	Savantic
10	2SC2334-S	Silicon transistor	NEC
11	2SC2334-Z	Silicon transistor	NEC
12	2SC2335	SWITCHING SERIES NPN POWER TRANSISTORS(NPN)	MOSPEC Semiconductor
13	2SC2335	Silicon transistor	NEC
14	2SC2335	Trans GP BJT NPN 400V 15A 3-Pin(3+Tab) TO-220	New Jersey Semiconductor
15	2SC2335	Silicon NPN Power Transistors TO-220C package	Savantic
16	2SC2335-S	Silicon transistor	NEC
17	2SC2335-Z	Silicon transistor	NEC
18	2SC2335F	Silicon NPN Power Transistors TO-220F package	Savantic
19	2SC2336	PNP/NPN SILICON EPITAXIAL TRANSISTOR	NEC
20	2SC2336	Silicon NPN Power Transistors TO-220 package	Savantic
21	2SC2336A	PNP/NPN SILICON EPITAXIAL TRANSISTOR	NEC
22	2SC2336A	Silicon NPN Power Transistors TO-220 package	Savantic
23	2SC2336B	PNP/NPN SILICON EPITAXIAL TRANSISTOR	NEC
24	2SC2336B	Silicon NPN Power Transistors TO-220 package	Savantic
25	2SC2337	Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications	NEC
26	2SC2337	Silicon NPN Power Transistors TO-3 package	Savantic
27	2SC2337A	Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications	NEC
28	CSC2330	1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 40 - 240 hFE.	Continental Device India Limited
29	CSC2330O	0.900W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 70 - 140 hFE.	Continental Device India Limited
30	CSC2330R	1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 40 - 80 hFE.	Continental Device India Limited

Datasheets found :: 72 Page: | 1 | 2 | 3 |