No. |
Part Name |
Description |
Manufacturer |
1 |
2SC2690 |
Use in audio and radio Frequency power amplifiers. |
NEC |
2 |
2SC2690 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
3 |
2SC2690 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
4 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
5 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
6 |
2SC2690A |
Silicon NPN Power Transistors TO-126 package |
Savantic |
7 |
2SC2690A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
8 |
CSA1220 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSC2690 |
Continental Device India Limited |
9 |
CSA1220A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 2.500A Ic, 60 - 320 hFE. Complementary CSC2690A |
Continental Device India Limited |
10 |
CSA1220AO |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690AO |
Continental Device India Limited |
11 |
CSA1220AR |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690AR |
Continental Device India Limited |
12 |
CSA1220AY |
1.200W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690AY |
Continental Device India Limited |
13 |
CSA1220O |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSC2690O |
Continental Device India Limited |
14 |
CSA1220R |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSC2690R |
Continental Device India Limited |
15 |
CSA1220Y |
1.200W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSC2690Y |
Continental Device India Limited |
16 |
CSC2690 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220 |
Continental Device India Limited |
17 |
CSC2690A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220A |
Continental Device India Limited |
18 |
CSC2690AO |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220AO |
Continental Device India Limited |
19 |
CSC2690AR |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220AR |
Continental Device India Limited |
20 |
CSC2690AY |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220AY |
Continental Device India Limited |
21 |
CSC2690O |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 100 - 200 hFE. Complementary CSA1220O |
Continental Device India Limited |
22 |
CSC2690R |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 120 hFE. Complementary CSA1220R |
Continental Device India Limited |
23 |
CSC2690Y |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 160 - 320 hFE. Complementary CSA1220Y |
Continental Device India Limited |
24 |
KSC2690 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
25 |
KSC2690 |
NPN (AUDIO FREQUENCY/ HIGH FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
26 |
KSC2690A |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
27 |
KSC2690A |
NPN (AUDIO FREQUENCY/ HIGH FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
28 |
KSC2690AOS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
29 |
KSC2690AOSTSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
30 |
KSC2690AYS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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