No. |
Part Name |
Description |
Manufacturer |
1 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
2 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
3 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
4 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
5 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
6 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
7 |
2SC3000 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
8 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
9 |
2SC3006 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
10 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
11 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
12 |
2SC3012 |
Silicon NPN Power Transistors TO-3PFa package |
Savantic |
13 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
14 |
2SC3012 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
15 |
2SC3012-N |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
16 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
17 |
2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
18 |
2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
19 |
2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
20 |
2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
21 |
2SC3022 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
22 |
2SC3022 |
Trans GP BJT NPN 17V 7A 5-Pin T-31E |
New Jersey Semiconductor |
23 |
2SC3025 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
24 |
2SC3025 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
25 |
2SC3026 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
26 |
2SC3026 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
27 |
2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
28 |
2SC3030 |
Trans Darlington NPN 800V 7A |
New Jersey Semiconductor |
29 |
2SC3031 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
30 |
2SC3032 |
High speed switching transistor |
COLLMER SEMICONDUCTOR INC |
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