| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC517 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 2 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3 |
2SC5172 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
| 4 |
2SC5173 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV HORIZONTAL DRIVER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS |
TOSHIBA |
| 5 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 7 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 8 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 9 |
2SC5177-T1 |
High fT, high gain transistor |
NEC |
| 10 |
2SC5177-T2 |
High fT, high gain transistor |
NEC |
| 11 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 12 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 13 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 14 |
2SC5178R |
High fT, high gain transistor |
NEC |
| 15 |
2SC5178R-T1 |
High fT, high gain transistor |
NEC |
| 16 |
2SC5178R-T2 |
High fT, high gain transistor |
NEC |
| 17 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 18 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 19 |
2SC5179-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 20 |
NX8570SC517-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. FC-PC connector. |
NEC |
| 21 |
NX8570SC517-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. SC-PC connector. |
NEC |
| 22 |
NX8571SC517-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. FC-PC connector. |
NEC |
| 23 |
NX8571SC517-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. SC-PC connector. |
NEC |
| 24 |
UPA827 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
| 25 |
UPA827TF |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
| 26 |
UPA827TF-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
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