| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC606 |
Silicon NPN Transistor |
COMPELEC |
| 2 |
2SC606 |
NPN SILICON TRANSISTOR |
Unknow |
| 3 |
2SC606(B) |
NPN Silicon Transistor |
NEC |
| 4 |
2SC6061 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 5 |
NX8570SC606-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector. |
NEC |
| 6 |
NX8570SC606-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector. |
NEC |
| 7 |
NX8571SC606-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector. |
NEC |
| 8 |
NX8571SC606-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector. |
NEC |
| 9 |
STPSC606 |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 10 |
STPSC606D |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| 11 |
STPSC606G-TR |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
| | | |
