| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 2 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 3 |
2SC828 |
Transistor - JEIDA Series |
National Semiconductor |
| 4 |
2SC828 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 5 |
2SC828A |
Si NPN Epitaxial Planar |
Unknow |
| 6 |
2SC829 |
Transistor - JEIDA Series |
National Semiconductor |
| 7 |
2SC829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 8 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 9 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 10 |
2SC838 |
FM RADIO AMP/ MIX CONV/ OSC IF AMP |
Etron Tech |
| 11 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 12 |
2SC839 |
FM/AM RADIO RF AMP,CONV,OSC,IF AMP |
USHA India LTD |
| 13 |
2SC853 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 14 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 15 |
2SC857H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching |
Hitachi Semiconductor |
| 16 |
2SC863 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 17 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 18 |
2SC867 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
| 19 |
2SC892 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 20 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 21 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 22 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 23 |
CSC815 |
0.400W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 400 hFE |
Continental Device India Limited |
| 24 |
CSC815G |
0.400W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 200 - 400 hFE |
Continental Device India Limited |
| 25 |
CSC815Q |
0.400W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 70 - 140 hFE |
Continental Device India Limited |
| 26 |
CSC815R |
0.400W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 40 - 80 hFE |
Continental Device India Limited |
| 27 |
CSC815Y |
0.400W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.200A Ic, 120 - 240 hFE |
Continental Device India Limited |
| 28 |
DSC8003 |
Silicon NPN epitaxial planar type - For low frequency output amplification |
Panasonic |
| 29 |
DSC8004 |
Silicon NPN epitaxial planar type - For low frequency output amplification - Complementary to DSA8004 |
Panasonic |
| 30 |
DSC8102 |
Silicon NPN epitaxial planar type - For low frequency output amplification |
Panasonic |
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