| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC892 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 2 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 3 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 4 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 5 |
NX8570SC899D-BA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). FC-PC connector. |
NEC |
| 6 |
NX8570SC899D-CA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). SC-PC connector. |
NEC |
| 7 |
NX8571SC899D-BA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). FC-PC connector. |
NEC |
| 8 |
NX8571SC899D-CA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). SC-PC connector. |
NEC |
| | | |
