| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD111 |
Industrial Transistor Specification Table |
TOSHIBA |
| 2 |
2SD111 |
Silicon NPN diffused junction power transistor |
TOSHIBA |
| 3 |
2SD1110 |
Silicon NPN Power Transistors TO-3PFa package |
Savantic |
| 4 |
2SD1110 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 5 |
2SD1111 |
NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications |
SANYO |
| 6 |
2SD1113 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 7 |
2SD1113 |
Transistors>Switching/Bipolar |
Renesas |
| 8 |
2SD1113(K) |
Silicon NPN Darlington Transistor |
Hitachi Semiconductor |
| 9 |
2SD1113K |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 10 |
2SD1115K |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 11 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 12 |
2SD1119 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 13 |
2SD1119G |
Silicon NPN epitaxial planar type |
Panasonic |
| 14 |
ISD1110P |
Single-chip voice record/playback device with 10 seconds duration |
Information Storage Devices |
| 15 |
ISD1110S |
Single-chip voice record/playback device with 10 seconds duration |
Information Storage Devices |
| 16 |
ISD1110X |
Single-chip voice record/playback device with 10 seconds duration |
Information Storage Devices |
| 17 |
ISD1112P |
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES |
etc |
| 18 |
ISD1112P |
Single-chip voice record/playback device with 12 seconds duration |
Information Storage Devices |
| 19 |
ISD1112S |
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES |
etc |
| 20 |
ISD1112S |
Single-chip voice record/playback device with 12 seconds duration |
Information Storage Devices |
| 21 |
ISD1112X |
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES |
etc |
| 22 |
ISD1112X |
Single-chip voice record/playback device with 12 seconds duration |
Information Storage Devices |
| 23 |
SD1112BD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 24 |
SD1112CHP |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 25 |
SD1112DD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 26 |
SD1112HD |
200 V, 7 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 27 |
SD1113BD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 28 |
SD1113CHP |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 29 |
SD1113DD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 30 |
SD1113HD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| | | |
