| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.4KESD150 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1.4KESD150A |
Transient Voltage Suppressor |
Microsemi |
| 3 |
1.4KESD150C |
Transient Voltage Suppressor |
Microsemi |
| 4 |
14KESD150 |
Transient Voltage Suppressor |
Microsemi |
| 5 |
14KESD150A |
Transient Voltage Suppressor |
Microsemi |
| 6 |
2SD1504 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 7 |
2SD1504 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 8 |
2SD1505 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9 |
2SD1506 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 10 |
2SD1506 |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
| 11 |
2SD1506 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 12 |
2SD1508 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINTON) PULSE MOTOR DRIVE, HANNER DIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 13 |
2SD1509 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS, SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 14 |
CSB1065 |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 |
Continental Device India Limited |
| 15 |
CSB1065N |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N |
Continental Device India Limited |
| 16 |
CSB1065P |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P |
Continental Device India Limited |
| 17 |
CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q |
Continental Device India Limited |
| 18 |
CSB1065R |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R |
Continental Device India Limited |
| 19 |
CSD1506 |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSB1065 |
Continental Device India Limited |
| 20 |
CSD1506N |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSB1065N |
Continental Device India Limited |
| 21 |
CSD1506P |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSB1065P |
Continental Device India Limited |
| 22 |
CSD1506Q |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSB1065Q |
Continental Device India Limited |
| 23 |
CSD1506R |
10.000W Low Frequency NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSB1065R |
Continental Device India Limited |
| 24 |
MLL1.4KESD150 |
Transient Voltage Suppressor |
Microsemi |
| 25 |
MLL1.4KESD150A |
Transient Voltage Suppressor |
Microsemi |
| 26 |
MLL1.4KESD150C |
Transient Voltage Suppressor |
Microsemi |
| 27 |
MLL1.4KESD150CA |
Transient Voltage Suppressor |
Microsemi |
| 28 |
MLL14KESD150 |
Transient Voltage Suppressor |
Microsemi |
| 29 |
MLL14KESD150A |
Transient Voltage Suppressor |
Microsemi |
| 30 |
RSD150N06 |
4V Drive Nch MOSFET |
ROHM |
| | | |
