No. |
Part Name |
Description |
Manufacturer |
1 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
2 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
3 |
2SD2271 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR) MOTOR DRIVE APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS |
TOSHIBA |
4 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
5 |
2SD2275 |
Power Device - Power Transistors - For Audio |
Panasonic |
6 |
2SD2276 |
Power Device - Power Transistors - For Audio |
Panasonic |
7 |
KSD227 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
8 |
KSD227 |
NPN (LOW FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
9 |
KSD227GBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10 |
KSD227GTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11 |
KSD227YBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12 |
KSD227YTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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