| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.4KESD36 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1.4KESD36A |
Transient Voltage Suppressor |
Microsemi |
| 3 |
1.4KESD36C |
Transient Voltage Suppressor |
Microsemi |
| 4 |
14KESD36 |
Transient Voltage Suppressor |
Microsemi |
| 5 |
14KESD36A |
Transient Voltage Suppressor |
Microsemi |
| 6 |
2SD360 |
2SD359 |
Unknow |
| 7 |
2SD361 |
2SD361 |
Unknow |
| 8 |
2SD361 |
2SD361 |
Unknow |
| 9 |
2SD362 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 10 |
CSD362 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 140 hFE. |
Continental Device India Limited |
| 11 |
CSD362N |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 20 - 50 hFE. |
Continental Device India Limited |
| 12 |
CSD362O |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 13 |
CSD362R |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 5.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 14 |
CSD363 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. |
Continental Device India Limited |
| 15 |
CSD363O |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 16 |
CSD363R |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 17 |
CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 18 |
DCR1277SD36 |
Phase Control Thyristor |
Dynex Semiconductor |
| 19 |
KSD362 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 20 |
KSD362 |
NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT) |
Samsung Electronic |
| 21 |
KSD362N |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 22 |
KSD362R |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 23 |
KSD362RTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 24 |
KSD363 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 25 |
KSD363 |
300 V, 6 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 26 |
KSD363O |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 27 |
KSD363OTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
KSD363R |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 29 |
KSD363RTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 30 |
KSD363Y |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
