| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CSD363 |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. |
Continental Device India Limited |
| 2 |
CSD363O |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 3 |
CSD363R |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 4 |
CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 5 |
KSD363 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6 |
KSD363 |
300 V, 6 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7 |
KSD363O |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8 |
KSD363OTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 9 |
KSD363R |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 10 |
KSD363RTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 11 |
KSD363Y |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12 |
KSD363YTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
