| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD669 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 2 |
2SD669 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 3 |
2SD669 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 4 |
2SD669-B |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
2SD669-C |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SD669-D |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SD669A |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 8 |
2SD669A |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 9 |
2SD669A |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 10 |
2SD669A-B |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 11 |
2SD669A-C |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 12 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 13 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 14 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 15 |
CSD669AC |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 16 |
CSD669B |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 17 |
CSD669C |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 18 |
CSD669D |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 19 |
HSD669A |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| | | |
