| No. |
Part Name |
Description |
Manufacturer |
| 1 |
-7L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 2 |
-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 3 |
-8L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 4 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 5 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 6 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 7 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 8 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 9 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 10 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 11 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 12 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 13 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
| 14 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
| 15 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 16 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 17 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 18 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 19 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
| 20 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 21 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 22 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 23 |
AD484M1644VTA |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 24 |
AD484M1644VTA-10I |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 25 |
AD484M1644VTA-10L |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 26 |
AD484M1644VTA-10LI |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 27 |
AD484M1644VTA-15 |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 28 |
AD484M1644VTA-5.5 |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 29 |
AD484M1644VTA-5.5 |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| 30 |
AD484M1644VTA-6 |
Ascend Semiconductor Corporation(64Mb SDRAM) |
etc |
| | | |
