No. |
Part Name |
Description |
Manufacturer |
1 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
2 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
3 |
AT89C51 |
80C31 Microcontroller with 4K bytes Flash. Not recommended for new designs. Use AT89S51. |
Atmel |
4 |
AT89C52 |
80C32 Microcontroller with 8K bytes Flash. Not recommended for new designs. Use AT89S52. |
Atmel |
5 |
AT89LV51 |
2.7-Volt, 80C31 Microcontroller with 4K bytes Flash. Not recommended for new designs. Use AT89LS51. |
Atmel |
6 |
AT89LV52 |
2.7-Volt, 80C32 Microcontroller with 8K bytes Flash. Not recommended for new designs. Use AT89LS52. |
Atmel |
7 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
8 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
9 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| | | |