| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3070 |
200 V, 250 mW general purpose diode |
BKC International Electronics |
| 2 |
1N4531 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 3 |
1N625 |
20 V, 500 mW general purpose diode |
BKC International Electronics |
| 4 |
1N626 |
35 V, 500 mW general purpose diode |
BKC International Electronics |
| 5 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
| 6 |
1N628 |
125 V, 500 mW general purpose diode |
BKC International Electronics |
| 7 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
| 8 |
1N645 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 9 |
1N645 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 10 |
1N645A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 11 |
1N646 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 12 |
1N647 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 13 |
1N647 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 14 |
1N648 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 15 |
1N649 |
Diffused Silicon General-Purpose Diode |
ITT Semiconductors |
| 16 |
1N649 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 17 |
1N649A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 18 |
1N64A |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 19 |
1N64G |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 20 |
1N6512 |
SILICON GENERAL PURPOSE DIODE |
New Jersey Semiconductor |
| 21 |
1N658 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 22 |
1N658 |
General Purpose Diodes |
Fairchild Semiconductor |
| 23 |
1N659 |
50 V, 500 mW general purpose diode |
BKC International Electronics |
| 24 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 25 |
1N661 |
200 V, 500 mW general purpose diode |
BKC International Electronics |
| 26 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 27 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 28 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 29 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
| 30 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
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