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Datasheets for SE H

Datasheets found :: 1373
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N3064M Diode Switching 75V 0.01A 2-Pin Case H New Jersey Semiconductor
2 1N461A 25 V, 500 mW general purpose high conductance diode BKC International Electronics
3 1N461A General purpose high conductance diode. Working inverse voltage 25V. Fairchild Semiconductor
4 1N462A 60 V, 500 mW general purpose high conductance diode BKC International Electronics
5 1N462A General purpose high conductance diode. Working inverse voltage 60V. Fairchild Semiconductor
6 1N463A 175 V, 500 mW general purpose high conductance diode BKC International Electronics
7 1N463A General purpose high conductance diode. Working inverse voltage 175V. Fairchild Semiconductor
8 1N464A 125 V, 500 mW general purpose high conductance diode BKC International Electronics
9 1N5194 General Purpose High-Temperatura Diode ITT Semiconductors
10 1N5195 General Purpose High-Temperatura Diode ITT Semiconductors
11 1N5196 General Purpose High-Temperatura Diode ITT Semiconductors
12 1N82 Diode Switching 50V 0.005A 2-Pin Case H New Jersey Semiconductor
13 1N83 Diode Switching 50V 0.005A 2-Pin Case H New Jersey Semiconductor
14 1N85 Diode Switching 50V 0.005A 2-Pin Case H New Jersey Semiconductor
15 2N1893 GENERAL PURPOSE HIGH-VOLTAGE TYPE SGS Thomson Microelectronics
16 2N3791 Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. General Electric Solid State
17 2N3792 Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. General Electric Solid State
18 2N5400 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
19 2N5401 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
20 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
21 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
22 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
23 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
24 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
25 2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. General Electric Solid State
26 2SA1076 160V PNP silicon general purpose high speed power transistor Fujitsu Microelectronics
27 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
28 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
29 2SC5378 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) Panasonic
30 2SC5431-T1 Reduced noise high frequency amplification transistor NEC


Datasheets found :: 1373
Page: | 1 | 2 | 3 | 4 | 5 |



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