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Datasheets for SE HIG

Datasheets found :: 1009
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N461A 25 V, 500 mW general purpose high conductance diode BKC International Electronics
2 1N461A General purpose high conductance diode. Working inverse voltage 25V. Fairchild Semiconductor
3 1N462A 60 V, 500 mW general purpose high conductance diode BKC International Electronics
4 1N462A General purpose high conductance diode. Working inverse voltage 60V. Fairchild Semiconductor
5 1N463A 175 V, 500 mW general purpose high conductance diode BKC International Electronics
6 1N463A General purpose high conductance diode. Working inverse voltage 175V. Fairchild Semiconductor
7 1N464A 125 V, 500 mW general purpose high conductance diode BKC International Electronics
8 1N5194 General Purpose High-Temperatura Diode ITT Semiconductors
9 1N5195 General Purpose High-Temperatura Diode ITT Semiconductors
10 1N5196 General Purpose High-Temperatura Diode ITT Semiconductors
11 2N1893 GENERAL PURPOSE HIGH-VOLTAGE TYPE SGS Thomson Microelectronics
12 2N3791 Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. General Electric Solid State
13 2N3792 Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. General Electric Solid State
14 2N5400 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
15 2N5401 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
16 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
17 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
18 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
19 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
20 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
21 2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. General Electric Solid State
22 2SA1076 160V PNP silicon general purpose high speed power transistor Fujitsu Microelectronics
23 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
24 2SA1945 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
25 2SC5378 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) Panasonic
26 2SC5431-T1 Reduced noise high frequency amplification transistor NEC
27 2SC5432-T1 Reduced noise high frequency amplification transistor NEC
28 2SC5433-T1 Reduced noise high frequency amplification transistor NEC
29 2SC5434-T1 Reduced noise high frequency amplification transistor NEC
30 2SC5435-T1 Reduced noise high frequency amplification transistor NEC


Datasheets found :: 1009
Page: | 1 | 2 | 3 | 4 | 5 |



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