No. |
Part Name |
Description |
Manufacturer |
1 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
2 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
3 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
4 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
5 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
6 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
7 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
8 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
9 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
10 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
11 |
CHA2095A |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
12 |
CHA2095A99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
13 |
CHA2395 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
14 |
CHA2395-99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
15 |
DS446 |
Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Switching Diode |
SANYO |
16 |
LP2988 |
Micropower, 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) |
National Semiconductor |
17 |
LP2988IMX-2.8 |
Micropower/ 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) |
National Semiconductor |
18 |
LP298AIM-2.8 |
Micropower/ 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) |
National Semiconductor |
19 |
LT1226 |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
20 |
LT1226C |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
21 |
LT1226CN8 |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
22 |
LT1226CN8#PBF |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
23 |
LT1226CS8 |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
24 |
LT1226CS8#PBF |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
25 |
LT1226CS8#TR |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
26 |
LT1226CS8#TRPBF |
Low Noise Very High Speed Operational Amplifier |
Linear Technology |
27 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
28 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
29 |
TC7652 |
The TC7652 is a lower noise version of the TC7650, sacrificing some input specifications (bias current and bandwidth)to achieve a 10x reduction in noise.All the other benefits of the chopper technique are present,i.e.freedom from offset ad |
Microchip |
30 |
TDA1175 |
LOW-NOISE VERTICAL DEFLECTION SYSTEM |
ST Microelectronics |
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