DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SE VE

Datasheets found :: 32
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
2 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
3 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
4 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
5 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
6 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
7 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
8 CFY77 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) Siemens
9 CFY77-08 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) Siemens
10 CFY77-10 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) Siemens
11 CHA2095A 36-40GHz Low Noise Very High Gain Amplifier United Monolithic Semiconductors
12 CHA2095A99F/00 36-40GHz Low Noise Very High Gain Amplifier United Monolithic Semiconductors
13 CHA2395 36-40GHz Low Noise Very High Gain Amplifier United Monolithic Semiconductors
14 CHA2395-99F/00 36-40GHz Low Noise Very High Gain Amplifier United Monolithic Semiconductors
15 DS446 Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Switching Diode SANYO
16 LP2988 Micropower, 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) National Semiconductor
17 LP2988IMX-2.8 Micropower/ 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) National Semiconductor
18 LP298AIM-2.8 Micropower/ 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available (LP2988) National Semiconductor
19 LT1226 Low Noise Very High Speed Operational Amplifier Linear Technology
20 LT1226C Low Noise Very High Speed Operational Amplifier Linear Technology
21 LT1226CN8 Low Noise Very High Speed Operational Amplifier Linear Technology
22 LT1226CN8#PBF Low Noise Very High Speed Operational Amplifier Linear Technology
23 LT1226CS8 Low Noise Very High Speed Operational Amplifier Linear Technology
24 LT1226CS8#PBF Low Noise Very High Speed Operational Amplifier Linear Technology
25 LT1226CS8#TR Low Noise Very High Speed Operational Amplifier Linear Technology
26 LT1226CS8#TRPBF Low Noise Very High Speed Operational Amplifier Linear Technology
27 Q62702-F1549 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) Siemens
28 Q62702-F1559 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) Siemens
29 TC7652 The TC7652 is a lower noise version of the TC7650, sacrificing some input specifications (bias current and bandwidth)to achieve a 10x reduction in noise.All the other benefits of the chopper technique are present,i.e.freedom from offset ad Microchip
30 TDA1175 LOW-NOISE VERTICAL DEFLECTION SYSTEM ST Microelectronics


Datasheets found :: 32
Page: | 1 | 2 |



© 2024 - www Datasheet Catalog com