No. |
Part Name |
Description |
Manufacturer |
1 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
2 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
3 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
4 |
2SD1753 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
5 |
2SD1776 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
6 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
7 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
8 |
66229 |
CONSTANT CURRENT TRANSFER RATIO, SINGLE CHANNEL OPTOCOUPLERS, SCREENED TO JAN, JANTX, JANTXV |
Micropac Industries |
9 |
8765 |
Reflective Material 8765 White Transfer Film |
3M |
10 |
AD7112 |
Dual CMOS Multiplying DAC with Anti-Log Transfer Function for Audio Volume Control Applications |
Analog Devices |
11 |
AQW210T2SX |
PhotoMOS relay, GU (general use). multi-function (MOSFER & 2 optocoupler) type. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Picked from the 1/2/3/4/5/6-pin side. Tape and reel. |
Matsushita Electric Works(Nais) |
12 |
AQW210T2SZ |
PhotoMOS relay, GU (general use). multi-function (MOSFER & 2 optocoupler) type. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Picked from the 7/8/9/10/11/12-pin side. Tape and reel. |
Matsushita Electric Works(Nais) |
13 |
AQW210TSX |
PhotoMOS relay, GU (general use). multi-function (MOSFER & 1 optocoupler) type. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Picked from the 1/2/3/4-pin side. Tape and reel. |
Matsushita Electric Works(Nais) |
14 |
AQW210TSZ |
PhotoMOS relay, GU (general use). multi-function (MOSFER & 1 optocoupler) type. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Picked from the 5/6/7/8-pin side. Tape and reel. |
Matsushita Electric Works(Nais) |
15 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
16 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
17 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
18 |
AS172-73 |
PHEMT GaAs IC Transfer Switch DC-2 GHz |
Skyworks Solutions |
19 |
AS218-000 |
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz |
Skyworks Solutions |
20 |
AS218-321 |
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz |
Skyworks Solutions |
21 |
AS218-321LF |
PHEMT GaAs IC High Power Transfer Switch DC?6 GHz |
Skyworks Solutions |
22 |
AT71200MCRERB |
8M-pixel color image sensor. Frame transfer version with two memories zones. Anti-reflective window. |
Atmel |
23 |
BSW88 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
24 |
BSW89 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
25 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
26 |
FP7G100US60 |
Transfer Moded Type IGBT Module |
Fairchild Semiconductor |
27 |
FP7G150US60 |
Transfer Molded Type IGBT Module |
Fairchild Semiconductor |
28 |
FP7G50US60 |
Transfer Molded Type IGBT Module |
Fairchild Semiconductor |
29 |
FP7G75US60 |
Transfer Molded Type IGBT Module |
Fairchild Semiconductor |
30 |
FT18 |
Frame Transfer CCD Image Sensor |
Philips |
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