| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
| 2 |
3N204 |
N-channel-defletion dual-gate MOSFET. |
Motorola |
| 3 |
3N205 |
N-channel-defletion dual-gate MOSFET. |
Motorola |
| 4 |
BSS83P |
Low Voltage MOSFETs - Small Signal MOSFET. -60V, SOT-23, RDSon = 2 |
Infineon |
| 5 |
BUZ900P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
Magnatec |
| 6 |
BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
Magnatec |
| 7 |
BUZ902D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
Magnatec |
| 8 |
BUZ902DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
Magnatec |
| 9 |
BUZ903 |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
| 10 |
BUZ903D |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
| 11 |
BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
Magnatec |
| 12 |
BUZ905D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
Magnatec |
| 13 |
BUZ906 |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
| 14 |
BUZ906D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
| 15 |
BUZ907D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 16 |
BUZ907DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 17 |
BUZ908D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
| 18 |
BUZ908DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
| 19 |
CRF-22010-001 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
| 20 |
CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
| 21 |
CSD16342Q5A |
N-Channel NexFET� Power MOSFET.... |
Texas Instruments |
| 22 |
CSD18503KCS |
40V N-Channel NexFET� Power MOSFET... . |
Texas Instruments |
| 23 |
FDB8443_F085 |
40V N-Channel PowerTrench� MOSFET. |
Fairchild Semiconductor |
| 24 |
FDC5661N_F085 |
60V N-Channel Logic Level PowerTrench� MOSFET. |
Fairchild Semiconductor |
| 25 |
FDD8424H_F085 |
40V Dual N & P-Channel PowerTrench� MOSFET. (Transferred to alternate site. Please contact local reps for details) |
Fairchild Semiconductor |
| 26 |
FDP8443_F085 |
40V N-Channel PowerTrench�MOSFET. |
Fairchild Semiconductor |
| 27 |
FDP8896_F085 |
30V N-Channel PowerTrench� MOSFET. (Transferred to alternate site. Please contact local reps for details) |
Fairchild Semiconductor |
| 28 |
FDSS2407 |
62V N-Channel Dual PowerTrench� MOSFET. |
Fairchild Semiconductor |
| 29 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
| 30 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
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