DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SI-

Datasheets found :: 4082
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N4148 Small Signal Si-Diodes Diotec Elektronische
2 1N4150 Small Signal Si-Diodes Diotec Elektronische
3 1N4151 Small Signal Si-Diodes Diotec Elektronische
4 1N4448 Small Signal Si-Diodes Diotec Elektronische
5 1N5817 Si-Schottky-Rectifiers Diotec Elektronische
6 1N5818 Si-Schottky-Rectifiers Diotec Elektronische
7 1N5819 Si-Schottky-Rectifiers Diotec Elektronische
8 1N5820 Si-Schottky-Rectifiers Diotec Elektronische
9 1N5821 Si-Schottky-Rectifiers Diotec Elektronische
10 1N5822 Si-Schottky-Rectifiers Diotec Elektronische
11 28C256ASI-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
12 28C256ASI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
13 28C256ASI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
14 28C256ASI-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
15 28C256ASI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
16 28C256ASI-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
17 28C256ASI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
18 28C256ASI-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
19 28LV256SI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
20 28LV256SI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
21 28LV256SI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
22 28LV256SI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
23 28LV256SI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
24 28LV256SI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
25 28LV256SI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
26 28LV256SI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
27 2N3903 Si-Epitaxial PlanarTransistors Diotec Elektronische
28 2N3904 Si-Epitaxial PlanarTransistors Diotec Elektronische
29 2N3905 Si-Epitaxial PlanarTransistors Diotec Elektronische
30 2N3906 Si-Epitaxial PlanarTransistors Diotec Elektronische


Datasheets found :: 4082
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com