No. |
Part Name |
Description |
Manufacturer |
1 |
ASI1010 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
2 |
ISPLSI1016 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
3 |
ISPLSI1016/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
4 |
ISPLSI1016E |
In-System Programmable High Density PLD |
Lattice Semiconductor |
5 |
ISPLSI1016E-100LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
6 |
ISPLSI1016E-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
7 |
ISPLSI1016E-125LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
8 |
ISPLSI1016E-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
9 |
ISPLSI1016E-80LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
10 |
ISPLSI1016E-80LJI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
11 |
ISPLSI1016E-80LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
12 |
ISPLSI1016E-80LT44I |
In-System Programmable High Density PLD |
Lattice Semiconductor |
13 |
ISPLSI1016EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
14 |
ISPLSI1016EA-100LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
15 |
ISPLSI1016EA-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
16 |
ISPLSI1016EA-125LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
17 |
ISPLSI1016EA-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
18 |
ISPLSI1016EA-200LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
19 |
ISPLSI1016EA-200LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
20 |
SI1012R |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
21 |
SI1012X |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
22 |
SI1012X |
N-Channel 1.8-V (G-S) MOSFET |
Vishay |
23 |
SI1013R |
P-Channel 1.8-V (G-S) MOSFET |
Vishay |
24 |
SI1013X |
P-Channel 1.8-V (G-S) MOSFET |
Vishay |
25 |
SI1016X |
Complementary N- and P-Channel 1.8-V (G-S) MOSFET |
Vishay |
26 |
SSI101A |
Differential Amplifier |
Silicon Systems |
| | | |