| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ45 |
P-Channel Junction Field Effect Transistor |
NEC |
| 2 |
2SJ450 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 3 |
2SJ450 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 4 |
2SJ451 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 5 |
2SJ451 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 6 |
2SJ451 |
Transistors>Switching/MOSFETs |
Renesas |
| 7 |
2SJ452 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 8 |
2SJ452 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 9 |
2SJ456 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 10 |
2SJ458 |
P CHANNEL MOS SILICON TRANSISTOR |
SANYO |
| 11 |
2SJ459 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 12 |
NX8560SJ453-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1545.322 nm. Frequency 194.00 THz. FC-UPC connector. |
NEC |
| 13 |
NX8560SJ453-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1545.322 nm. Frequency 194.00 THz. SC-UPC connector. |
NEC |
| 14 |
NX8560SJ457-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. FC-UPC connector. |
NEC |
| 15 |
NX8560SJ457-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1545.720 nm. Frequency 193.95 THz. SC-UPC connector. |
NEC |
| | | |
