No. |
Part Name |
Description |
Manufacturer |
1 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
2 |
2SJ483 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
3 |
2SJ483 |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
4 |
2SJ483 |
Transistors>Switching/MOSFETs |
Renesas |
5 |
2SJ484 |
Silicon P-Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
6 |
2SJ484 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
7 |
2SJ484 |
Transistors>Switching/MOSFETs |
Renesas |
8 |
2SJ485 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
9 |
2SJ486 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
10 |
2SJ486 |
Silicon P Channel MOS FET Low FrequencyPower Switching |
Hitachi Semiconductor |
11 |
2SJ486 |
Transistors>Switching/MOSFETs |
Renesas |
12 |
NX8560SJ485-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1548.515 nm. Frequency 193.60 THz. FC-UPC connector. |
NEC |
13 |
NX8560SJ485-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1548.515 nm. Frequency 193.60 THz. SC-UPC connector. |
NEC |
14 |
NX8560SJ489-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1548.915 nm. Frequency 193.55 THz. FC-UPC connector. |
NEC |
15 |
NX8560SJ489-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1548.915 nm. Frequency 193.55 THz. SC-UPC connector. |
NEC |
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