| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ529 |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 2 |
2SJ529(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 3 |
2SJ529(L)/(S) |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 4 |
2SJ529(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| 5 |
2SJ529L |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 6 |
2SJ529L |
Transistors>Switching/MOSFETs |
Renesas |
| 7 |
2SJ529S |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 8 |
2SJ529S |
Transistors>Switching/MOSFETs |
Renesas |
| 9 |
NX8560SJ529-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. FC-UPC connector. |
NEC |
| 10 |
NX8560SJ529-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1552.926 nm. Frequency 193.05 THz. SC-UPC connector. |
NEC |
| | | |
