| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK601 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 2 |
2SK606 |
Silicon N Channel Junction Type |
Panasonic |
| 3 |
2SK608 |
Silicon N Channel Junction Type |
Panasonic |
| 4 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 5 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 6 |
2SK611 |
MOS FIELD EFFECT POWER TRANSISTOR |
NEC |
| 7 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
| 8 |
2SK612 |
MOS Field Effect Power Transistors |
Unknow |
| 9 |
2SK612-Z |
MOS Field Effect Power Transistors |
Unknow |
| 10 |
2SK614 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 11 |
2SK615 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 12 |
2SK619 |
SILICON N-CHANNEL MOS FET |
Hitachi Semiconductor |
| 13 |
2SK620 |
Silicon N-Channel MOS FET |
Panasonic |
| 14 |
2SK624 |
Si N-Channel Junction |
National Semiconductor |
| 15 |
2SK641 |
SILICON N-CHANNEL MOS FET |
Unknow |
| 16 |
2SK642 |
SILICON N-CHANNEL MOS FET |
Unknow |
| 17 |
2SK643 |
2SK643 |
TOSHIBA |
| 18 |
2SK643 |
2SK643 |
TOSHIBA |
| 19 |
2SK646 |
SILICON N-CHANNEL MOS FET |
Hitachi Semiconductor |
| 20 |
2SK649 |
Gallium Arsenide Devices |
Panasonic |
| 21 |
2SK65 |
Small-signal device - Small-signal FETs - Junction FETs |
Panasonic |
| 22 |
2SK653 |
Gallium Arsenide Devices |
Panasonic |
| 23 |
2SK654 |
FAST SWITCHING N-CHANNEL SILICON POWER MOSFET |
NEC |
| 24 |
2SK655 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 25 |
2SK656 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 26 |
2SK657 |
Small-signal device - Small-signal FETs - MOS FETs |
Panasonic |
| 27 |
2SK659 |
N-Channel MOS Field Effect Power Transistor |
NEC |
| 28 |
2SK659 |
N CHANNEL MOS FIELD EFECT POWER TRANSISTOR |
NEC |
| 29 |
2SK660 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 30 |
2SK662 |
Small-signal device - Small-signal FETs - Junction FETs |
Panasonic |
| | | |
