No. |
Part Name |
Description |
Manufacturer |
1 |
FSR1110D |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
Intersil |
2 |
FSR1110D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
3 |
FSR1110R |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
Intersil |
4 |
FSR1110R3 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
Intersil |
5 |
FSR1110R4 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
6 |
KSR1110 |
NPN Epitaxial Silicon Transistor, SOT-23 marking R10 |
Samsung Electronic |
7 |
KSR1111 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
8 |
KSR1111 |
NPN (SWITCHING APPLICATION) |
Samsung Electronic |
9 |
KSR1112 |
NPN SWITCHING APPLICATION) |
Samsung Electronic |
10 |
KSR1113 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11 |
KSR1113 |
NPN (SWITCHING APPLICATION) |
Samsung Electronic |
12 |
KSR1114 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking R14 |
Samsung Electronic |
13 |
SR1110 |
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
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