| No. |
Part Name |
Description |
Manufacturer |
| 1 |
KSR2010 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 2 |
KSR2011 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3 |
KSR2011 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 4 |
KSR2012 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 5 |
KSR2013 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6 |
KSR2013 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 7 |
KSR2014 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
| 8 |
SR2010 |
2.0A, 100V ultra fast recovery rectifier |
MCC |
| 9 |
SR2010 |
2 Amp Schottky Barrier Rectifier 80 to 100 Volts |
Micro Commercial Components |
| 10 |
SR20100 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 11 |
SR20100C |
Schottky Diode |
Rectron Semiconductor |
| 12 |
SR20100CS |
Schottky Diode |
Rectron Semiconductor |
| 13 |
SR20100CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=20A |
Comchip Technology |
| 14 |
SR20100PT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 15 |
SR20150 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 16 |
SR20150-G |
Schottky Barrier Rectifiers Diodes, VRRM=150V, VR=150V, IO=20A |
Comchip Technology |
| 17 |
SR20150C |
Schottky Diode |
Rectron Semiconductor |
| 18 |
SR20150CS |
Schottky Diode |
Rectron Semiconductor |
| 19 |
SR20150CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=150V, VR=150V, IO=20A |
Comchip Technology |
| 20 |
SR20150PT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| | | |
