| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 3 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 4 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 5 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 6 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 7 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 8 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 9 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 10 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 11 |
AT80C51SND1C |
C51 Microcontroller with Embedded MP3 Decoder ROMless. MultiMediaCard™, DataFlash®, SmartMedia™, CompactFlash™ ... |
Atmel |
| 12 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 13 |
C1353 |
Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 1000 pA. |
PerkinElmer Optoelectronics |
| 14 |
C1363 |
Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 4000 pA. |
PerkinElmer Optoelectronics |
| 15 |
C1373 |
Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 20000 pA. |
PerkinElmer Optoelectronics |
| 16 |
C1383 |
Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 100 pA. |
PerkinElmer Optoelectronics |
| 17 |
C1953 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 2500 pA. |
PerkinElmer Optoelectronics |
| 18 |
C1963 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 10000 pA. |
PerkinElmer Optoelectronics |
| 19 |
C1973 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 50000 pA. |
PerkinElmer Optoelectronics |
| 20 |
C1983 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 250 pA. |
PerkinElmer Optoelectronics |
| 21 |
CX-16F |
Compact/ thickness 1.6mm or less. |
Kyocera Kinseki Corporation |
| 22 |
CX-53F |
Ultra-thin/ thickness 1.1mm or less. |
Kyocera Kinseki Corporation |
| 23 |
CX-91F |
Ultrathin thickness 1.2mm or less. (6.03.71.0mm) |
Kyocera Kinseki Corporation |
| 24 |
CX-96 |
Ultrathin thickness 0.8mm or less. (4.93.10.7mm) |
Kyocera Kinseki Corporation |
| 25 |
CX-96F |
Ultrathin thickness 0.8mm or less. (4.93.10.7mm) |
Kyocera Kinseki Corporation |
| 26 |
KP202-A |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 27 |
KP202-AK |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 28 |
KP202-R |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 29 |
KP202-RK |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 30 |
KP203-A |
Silicon Piezoresistive Absolute Press... |
Infineon |
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