| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 2 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 3 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 4 |
PBSS306NZ |
100 V, 5.1 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 5 |
PBSS306NZ |
100 V, 5.1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 6 |
PBSS306PX |
100 V, 3.7 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 7 |
PBSS306PX |
100 V, 3.7 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 8 |
PBSS306PZ |
100 V, 4.1 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 9 |
PBSS306PZ |
100 V, 4.1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| | | |
