| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BSS91 |
N Channel Enhancement Mode Vertical D-MOS Transistor |
Philips |
| 2 |
BSS91 |
SIPMOS Small Signal Transistor |
Siemens |
| 3 |
DSS9110Y |
100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 4 |
DSS9110Y-7 |
100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 5 |
FSS9130D |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 6 |
FSS9130D1 |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 7 |
FSS9130D3 |
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 8 |
FSS9130R |
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 9 |
FSS9130R1 |
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 10 |
FSS9130R3 |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 11 |
FSS9130R4 |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 12 |
FSS913A0D |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 13 |
FSS913A0D1 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 14 |
FSS913A0D3 |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 15 |
FSS913A0R |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 16 |
FSS913A0R1 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 17 |
FSS913A0R3 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 18 |
FSS913A0R4 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 19 |
FSS913AOD |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 20 |
FSS913AOR |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 21 |
JANSR2N7440 |
Formerly Available as FSS913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 22 |
OSS9110 |
E.T.H. POWER RECTIFIER STACKS |
mble |
| 23 |
OSS9110-3 |
E.T.H. POWER RECTIFIER STACKS |
mble |
| 24 |
OSS9110-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 25 |
OSS9110-30 |
E.T.H. POWER RECTIFIER STACKS |
mble |
| 26 |
OSS9110-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 27 |
OSS9110-SERIES |
High Voltage Rectifier Stacks |
Philips |
| 28 |
PBSS9110AS |
PBSS9110AS; 100 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
| 29 |
PBSS9110AS |
PBSS9110AS; 100 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
| 30 |
PBSS9110AS |
100 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
| | | |
