No. |
Part Name |
Description |
Manufacturer |
1 |
STD150 ASIC |
Input / Output Cell |
Samsung Electronic |
2 |
STD150 ASIC |
I/O Cells |
Samsung Electronic |
3 |
STD150 ASIC |
Primitive Miscellanies |
Samsung Electronic |
4 |
STD150 ASIC |
Primitive Latches |
Samsung Electronic |
5 |
STD150 ASIC |
STD150 Brochure Rev. 1.0 |
Samsung Electronic |
6 |
STD150 ASIC |
STD150 Brochure Rev. 1.0 |
Samsung Electronic |
7 |
STD150 ASIC |
Introduction(Jan. 22, 2002) |
Samsung Electronic |
8 |
STD150 ASIC |
Primitive Overview |
Samsung Electronic |
9 |
STD150 ASIC |
I/O IP Cells |
Samsung Electronic |
10 |
STD150 ASIC |
Timmings |
Samsung Electronic |
11 |
STD150 ASIC |
High Density Memories |
Samsung Electronic |
12 |
STD150 ASIC |
Characteristics(Jan. 22, 2002) |
Samsung Electronic |
13 |
STD150 ASIC |
Package Capabilities |
Samsung Electronic |
14 |
STD150 ASIC |
Glossary of analog terms |
Samsung Electronic |
15 |
STD150 ASIC |
PLL2108X (Jan. 17, 2002) |
Samsung Electronic |
16 |
STD150 ASIC |
Primitive Flip/Flops |
Samsung Electronic |
17 |
STD150 ASIC |
Primitive Logic Cells |
Samsung Electronic |
18 |
STD150 ASIC |
Maximum Fanouts |
Samsung Electronic |
19 |
STD150N3LLH6 |
N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET |
ST Microelectronics |
20 |
STD150NH02L |
N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION |
SGS Thomson Microelectronics |
21 |
STD150NH02L |
N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION |
ST Microelectronics |
22 |
STD150NH02L-1 |
N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET |
ST Microelectronics |
23 |
STD150NH02LT4 |
N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET |
ST Microelectronics |
24 |
STD155N3H6 |
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
25 |
STD155N3LH6 |
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
26 |
STD15N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
27 |
STD15N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
28 |
STD15N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
29 |
STD15N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
30 |
STD15N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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