| No. |
Part Name |
Description |
Manufacturer |
| 1 |
SSTD89A |
N-Channel JFET with Built-In Self-Biased Diodes |
Vishay |
| 2 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
| 3 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
| 4 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
| 5 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
| 6 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
| 7 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
| 8 |
STD80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 9 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 10 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 11 |
STD815CP40 |
Complementary transistor pair in a single package |
ST Microelectronics |
| 12 |
STD83003 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
| 13 |
STD83003 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
ST Microelectronics |
| 14 |
STD83003-1 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
ST Microelectronics |
| 15 |
STD83003T4 |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
ST Microelectronics |
| 16 |
STD830CP40 |
Complementary transistor pair in a single package |
ST Microelectronics |
| 17 |
STD840DN40 |
Dual NPN high voltage transistors in a single package |
ST Microelectronics |
| 18 |
STD845DN40 |
Transistors, Power Bipolar, High Voltage |
ST Microelectronics |
| 19 |
STD85N3LH5 |
N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK |
ST Microelectronics |
| 20 |
STD86N3LH5 |
N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET |
ST Microelectronics |
| 21 |
STD882 |
NPN Silicon Transistor |
AUK Corp |
| 22 |
STD882D |
NPN Silicon Transistor |
AUK Corp |
| 23 |
STD888 |
MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTOR |
ST Microelectronics |
| 24 |
STD888T4 |
MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTOR |
ST Microelectronics |
| 25 |
STD8N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 26 |
STD8N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 27 |
STD8N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 28 |
STD8N10L |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
ST Microelectronics |
| 29 |
STD8N65M5 |
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in DPAK |
ST Microelectronics |
| 30 |
STD8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| | | |
