| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BStH61 |
Disc thyristor 160A |
Siemens |
| 2 |
BStH6113y |
Disc thyristor 160A 200V |
Siemens |
| 3 |
BStH6120y |
Disc thyristor 160A 300V |
Siemens |
| 4 |
BStH6126y |
Disc thyristor 160A 400V |
Siemens |
| 5 |
BStH6133y |
Disc thyristor 160A 500V |
Siemens |
| 6 |
STH60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 7 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 8 |
STH60N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 9 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 10 |
STH61004Z |
1300 nm Laser, High Power |
Infineon |
| 11 |
STH61004ZE9313 |
1300 nm Laser, High Power |
Infineon |
| 12 |
STH61005AE9292 |
1300 nm Laser, High Power |
Infineon |
| 13 |
STH61005IE9292 |
1300 nm Laser, High Power |
Infineon |
| 14 |
STH61005Z |
1300 nm Laser, High Power |
Infineon |
| 15 |
STH61005ZE9304 |
1300 nm Laser, High Power |
Infineon |
| 16 |
STH61005ZE9313 |
1300 nm Laser, High Power |
Infineon |
| 17 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 18 |
STH6N100 |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 19 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 20 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 21 |
STH6N100FI |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 22 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 23 |
STH6NA80FI |
N - CHANNEL 800V - 1.8 Ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 24 |
STH6NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 25 |
STH6NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
