No. |
Part Name |
Description |
Manufacturer |
1 |
STH60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
2 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
3 |
STH60N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
4 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
5 |
STH61004Z |
1300 nm Laser, High Power |
Infineon |
6 |
STH61004ZE9313 |
1300 nm Laser, High Power |
Infineon |
7 |
STH61005AE9292 |
1300 nm Laser, High Power |
Infineon |
8 |
STH61005IE9292 |
1300 nm Laser, High Power |
Infineon |
9 |
STH61005Z |
1300 nm Laser, High Power |
Infineon |
10 |
STH61005ZE9304 |
1300 nm Laser, High Power |
Infineon |
11 |
STH61005ZE9313 |
1300 nm Laser, High Power |
Infineon |
12 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
13 |
STH6N100 |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
14 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
15 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
16 |
STH6N100FI |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
17 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
18 |
STH6NA80FI |
N - CHANNEL 800V - 1.8 Ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
19 |
STH6NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
20 |
STH6NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
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