No. |
Part Name |
Description |
Manufacturer |
1 |
16C552 |
DUAL ASYCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO |
Texas Instruments |
2 |
IP1203 |
Single Output Full Function Sychronous Buck Power Block. |
International Rectifier |
3 |
IP1203PBF |
Single Output Full Function Sychronous Buck Power Block. |
International Rectifier |
4 |
IP1203TRPBF |
Single Output Full Function Sychronous Buck Power Block. |
International Rectifier |
5 |
IP1206 |
Multiple Output Sychronous Buck Power Block. |
International Rectifier |
6 |
IP1206PBF |
Multiple Output Sychronous Buck Power Block. |
International Rectifier |
7 |
IP1206TRPBF |
Multiple Output Sychronous Buck Power Block. |
International Rectifier |
8 |
IR3622AM |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
9 |
IR3622AMPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
10 |
IR3622M |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
11 |
IR3622MPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
12 |
IR3622MTRPBF |
High Frequency 2-Phase Single or Dual Output Sychronous Step Down Controller with Output Tracking and Sequencing |
International Rectifier |
13 |
K4S280832B |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
14 |
K4S280832B-TC10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
15 |
K4S280832B-TC1H |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
16 |
K4S280832B-TC1L |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
17 |
K4S280832B-TC75 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
18 |
K4S280832B-TC80 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
19 |
K4S280832B-TCL10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
20 |
K4S280832B-TCL1H |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
21 |
K4S280832B-TCL1L |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
22 |
K4S280832B-TCL75 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
23 |
K4S280832B-TCL80 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
24 |
K4S280832B-TL10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
25 |
K4S280832B-TL1H |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
26 |
K4S280832B-TL1L |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
27 |
K4S280832B-TL75 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
28 |
K4S280832B-TL80 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
29 |
MC2681 |
Dual Asychronous Receiver/Transmitter |
Motorola |
30 |
MCM67A618 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM |
Motorola |
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