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Datasheets for T 0

Datasheets found :: 730
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N988 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance. Jinan Gude Electronic Device
2 1N988A 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. Jinan Gude Electronic Device
3 1N989 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. Jinan Gude Electronic Device
4 1N989A 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. Jinan Gude Electronic Device
5 1N990 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. Jinan Gude Electronic Device
6 1N990A 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. Jinan Gude Electronic Device
7 1N991 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. Jinan Gude Electronic Device
8 1N991A 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. Jinan Gude Electronic Device
9 1N992 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. Jinan Gude Electronic Device
10 1N992A 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. Jinan Gude Electronic Device
11 2N7227 POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm Advanced Power Technology
12 2N7228 POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm Advanced Power Technology
13 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
14 5B45 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
15 5B45-01 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
16 5B45-02 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
17 5B45-03 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
18 5B45-04 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
19 5B45-05 Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module Analog Devices
20 5B46 Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module Analog Devices
21 5B46-01 Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module Analog Devices
22 5B46-02 Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module Analog Devices
23 5B46-03 Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module Analog Devices
24 5B46-04 Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module Analog Devices
25 ADSHC-85 Fast 0.01% Track/Sample-and-Hold Amplifiers Analog Devices
26 ADSHC-85ET Fast 0.01% Track/Sample-and-Hold Amplifiers Analog Devices
27 AQZ104 Power photoMOS relay, 1-channel (form A). DC type. Output rating: load voltage 400 V, load current 0.7 A. Matsushita Electric Works(Nais)
28 AQZ104D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 400 V, load current 0.6 A. Matsushita Electric Works(Nais)
29 AQZ204 Power photoMOS relay, 1-channel (form A). AC/DC type. Output rating: load voltage 400 V, load current 0.5 A. Matsushita Electric Works(Nais)
30 AQZ204D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 400 V, load current 0.45 A. Matsushita Electric Works(Nais)


Datasheets found :: 730
Page: | 1 | 2 | 3 | 4 | 5 |



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