| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF6616 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 2 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 3 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 4 |
K4R521669A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 5 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 6 |
PB-IRF6616 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 7 |
TCD2903D |
The TCD2903D is a high sensitive and low dark current 10680 elements x 3 line CCD color image sensor which includes CCD drive circuit and clamp circuit. |
TOSHIBA |
| 8 |
TCD2950D |
The TCD2950D is a high sensitive and low dark current 10680 elements � 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner. |
TOSHIBA |
| | | |
