| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTD3055V1 |
Power MOSFET 12Amps, 60 Volts |
ON Semiconductor |
| 2 |
MTD3055VT4 |
Power MOSFET 12Amps, 60 Volts |
ON Semiconductor |
| 3 |
MTM12N05 |
N-CHANNEL TMOS POWER FET 12A 50V |
Motorola |
| 4 |
MTM12N06 |
N-CHANNEL TMOS POWER FET 12A 60V |
Motorola |
| 5 |
MTM12N08 |
N-CHANNEL TMOS POWER FET 12A 80V |
Motorola |
| 6 |
MTP12N05 |
N-CHANNEL TMOS POWER FET 12A 50V |
Motorola |
| 7 |
MTP12N06 |
N-CHANNEL TMOS POWER FET 12A 60V |
Motorola |
| 8 |
MTP12N08 |
N-CHANNEL TMOS POWER FET 12A 80V |
Motorola |
| 9 |
MTP12N10 |
N-CHANNEL TMOS POWER FET 12A 100V |
Motorola |
| 10 |
NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
| 11 |
NTE5872 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 12 |
NTE5873 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 13 |
NTE5874 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| 14 |
NTE5875 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| 15 |
NTE5876 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. |
NTE Electronics |
| 16 |
NTE5877 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. |
NTE Electronics |
| 17 |
NTE5878 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. |
NTE Electronics |
| 18 |
NTE5879 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. |
NTE Electronics |
| 19 |
NTE5880 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. |
NTE Electronics |
| 20 |
NTE5881 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. |
NTE Electronics |
| 21 |
NTE5882 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. |
NTE Electronics |
| 22 |
NTE5883 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. |
NTE Electronics |
| 23 |
NTE5886 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. |
NTE Electronics |
| 24 |
NTE5887 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. |
NTE Electronics |
| 25 |
NTE5890 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |
NTE Electronics |
| 26 |
UG12HT |
Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns |
Vishay |
| 27 |
UG12JT |
Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns |
Vishay |
| 28 |
UGB12HT |
Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns |
Vishay |
| 29 |
UGB12JT |
Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns |
Vishay |
| 30 |
UGF12HT |
Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns |
Vishay |
| | | |
