No. |
Part Name |
Description |
Manufacturer |
1 |
1N5935 |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
2 |
1N5935A |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
3 |
1N5935C |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
4 |
1N5935D |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
5 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
6 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
7 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
8 |
ADS5440-EP |
Enhanced Product 13-Bit 210-Msps Analog-To-Digital Converter 80-HTQFP -55 to 125 |
Texas Instruments |
9 |
ADS5440MPFPEP |
Enhanced Product 13-Bit 210-Msps Analog-To-Digital Converter 80-HTQFP -55 to 125 |
Texas Instruments |
10 |
ADS5444-EP |
Enhanced Product 13-Bit 250-Msps Analog-To-Digital Converter 80-HTQFP -55 to 125 |
Texas Instruments |
11 |
ADS5444MPFPEP |
Enhanced Product 13-Bit 250-Msps Analog-To-Digital Converter 80-HTQFP -55 to 125 |
Texas Instruments |
12 |
ADS5483 |
16-bit 135MSPS ADC with buffered inputs |
Texas Instruments |
13 |
ADS5483IRGCT |
16-bit 135MSPS ADC with buffered inputs 64-VQFN -40 to 85 |
Texas Instruments |
14 |
AQV210 |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
15 |
AQV210A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
16 |
AQV210AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
17 |
AQV210AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
18 |
AQV210EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
19 |
AQV210EHAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
20 |
AQV210HL |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
21 |
AQV210HLA |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
22 |
AQV210HLAX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
23 |
AQV210HLAZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
24 |
AQY210EH |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
25 |
AQY210EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
26 |
AQY210EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
27 |
AQY210EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
28 |
AQY410EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
29 |
AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
30 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
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