| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK2132-T |
High-voltage power MOS FET 180V/4A |
NEC |
| 2 |
AQV104AX |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 400V, load current 180 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 3 |
AQV104AZ |
PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 400V, load current 180 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 4 |
AQV217 |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 5 |
AQV217A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 6 |
AQV217AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 7 |
AQV217AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 8 |
GTVA311801FA-V1 |
High Power RF GaN on SiC HEMT 180W, 50V, 2700 - 3100 MHz |
Wolfspeed |
| 9 |
IRDCIP2005C-2 |
500kHz 50A Dual Output 180o Out of Phase Sync Buck Converter Reference Design |
International Rectifier |
| 10 |
IRF6628 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 11 |
IRF6628TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 12 |
IRF6628TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 13 |
IRF6629 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 14 |
IRF6629TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 15 |
IRF6629TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 16 |
IRF6635TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 17 |
IRF6635TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 18 |
IRF6638 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 19 |
IRF6638TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 20 |
IRF6638TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 21 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 22 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 23 |
MKT 1802 |
EIA standard chip sizes, Exellent thermal shock resistance, No piezoelectric effect, Nonpolar construction, Tape and Reel packaging supplied in hermetically sealed bags, Open construction |
Vishay |
| 24 |
MKT 1804 |
Box encapsulated capacitor for surface mounting , C-values 1000 pF-10 µF, 50 - 400 VDC, Code sizes 2220, 2824, 4036, 5045, 6560, Tape and Reel packaging |
Vishay |
| 25 |
PB-IRF6635 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 26 |
PB-IRF6638 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 27 |
PB-IRF6691 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 28 |
PTFB091802FC-V1 |
High Power RF LDMOS FET 180W, 28V, 920 - 960 MHz |
Wolfspeed |
| 29 |
PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz |
Wolfspeed |
| 30 |
THS8136 |
Triple 10-Bit 180-MSPS Graphics and Video DAC 48-HTQFP 0 to 70 |
Texas Instruments |
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